| Title |
Izovalentiškai legiruotų cinko selenido scintiliacinių kristalų priemaišinės liuminescencijos tyrimai / |
| Translation of Title |
Investigation of defect-related luminescence of isoelectronicaly doped zinc selenide based scintillators. |
| Authors |
Ševčenko, Dmitrij |
| Full Text |
|
| Pages |
51 |
| Keywords [eng] |
zinc selenide ; ZnSe ; scintillators ; defect-ralated luminescence ; isoelectronic doping |
| Abstract [eng] |
The thesis is aimed at the investigation of defect-related luminescence mechanisms in isoelectronically doped semiconductor ZnSe scintillators. The study provides a deeper insight into the basic mechanisms of defect-related luminescence in these scintillation crystals and to relate the luminescence efficiency and response time characteristics with the crystal growth parameters. Application of different techniques of optical spectroscopy revealed peculiarities of the radiative recombination mechanisms in ZnSe doped with tellurium and oxygen. A new carrier recombination model in ZnSe crystals doped with tellurium and oxygen is proposed and numerical simulation of the PL intensity dependence on temperature is performed. The strength of electron-phonon interaction in different ZnSe crystals doped with isovalent impurities is evaluated. A numerical simulation of the PL decay kinetics for donor-acceptor pair recombination model is performed. The influence of co-doping of the ZnSe scintillation crystals by rare earth elements on their afterglow and other luminescence characteristics was also under study. The key factors limiting the photoluminescence efficiency in the co doped ZnSe(Te) were identified. The in situ luminescence study of ZnSe(Te) revealed that these conventional scintillators can be utilized for detection of nonrelativistic protons (below 1.6 MeV) at fluencies below 1013 cm-2. |
| Dissertation Institution |
Vilniaus universitetas. |
| Type |
Summaries of doctoral thesis |
| Language |
English |
| Publication date |
2015 |
