| Title |
MOVPE growth of GaN via graphene layers on GaN/sapphire templates / |
| Authors |
Badokas, Kazimieras ; Kadys, Arūnas ; Augulis, Dominykas ; Mickevičius, Jūras ; Ignatjev, Ilja ; Skapas, Martynas ; Šebeka, Benjaminas ; Juška, Giedrius ; Malinauskas, Tadas |
| DOI |
10.3390/nano12050785 |
| Full Text |
|
| Is Part of |
Nanomaterials.. Basel : MDPI. 2022, vol. 12, iss. 5, art. no. 785, p. 1-10.. ISSN 2079-4991. eISSN 2079-4991 |
| Keywords [eng] |
MOVPE ; remote epitaxy ; gallium nitride ; graphene ; lift-off |
| Abstract [eng] |
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2022 |
| CC license |
|
