Title Enhancement of room-temperature low-field magnetoresistance in nanostructured lanthanum manganite films for magnetic sensor applications /
Authors Žurauskienė, Nerija ; Stankevič, Voitech ; Keršulis, Skirmantas ; Vagner, Milita ; Plaušinaitienė, Valentina ; Dobilas, Jorūnas ; Vasiliauskas, Remigijus ; Skapas, Martynas ; Koliada, Mykola ; Pietosa, Jaroslaw ; Wisniewski, Andrzej
DOI 10.3390/s22114004
Full Text Download
Is Part of Sensors: Magnetic Sensors and Systems for Scientific and Industrial Applications.. Basel : MDPI. 2022, vol. 22, iss. 11, art. no. 4004, p. 1-14.. eISSN 1424-8220
Keywords [eng] colossal magnetoresistance ; low-field magnetoresistance ; manganite films ; nanostructured thin films ; MOCVD technology ; magnetic field sensors
Abstract [eng] The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal-insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17-0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.
Published Basel : MDPI
Type Journal article
Language English
Publication date 2022
CC license CC license description