| Abstract [eng] |
Gallium nitride (GaN) is a wide band-gap semiconductor with a relatively large displacement energy. The displacement energy is an important parameter of material which determines its radiation hardness. Thereby, GaN is a promising material in production of solar-blind photo-sensors and radiation tolerant, low-leakage current particle detectors. The main obstacle in these applications of GaN remains high density of intrinsic technological defects. Introduction of the radiation defects during operation of particle sensors in harsh areas of particle accelerators considerably depends on pristine material, exploited for detector fabrication. The comprehensive study of electrical and optical characteristics, inherent for the pristine and radiation affected GaN, was performed in this work by combining different measurement techniques. The predominant technological and radiation-induced defects were identified. The findings were applied in the formation of hybrid multi-layer particle detectors and the development of techniques and apparatuses for their reading. |
