| Abstract [eng] |
Development of nowadays particle sensors intended for high energy physics experiments is addressed to increase of detector radiation hardness, to speeding-up of sensor response, to enhancement of sensor internal amplification, to advanced design of detector structure. However, radiation induced defects in Si material, acting mainly as generation/recombination and carrier capture centres, affect the detector functional parameters. The aim of this work is addressed to developments of defect engineering in new materials of elevated radiation hardness and modelling of irradiation caused removal of dopants as well as dopant activity transformations under local strain in SiGe alloys. Also, issues of production of thin and thick GaN material of relevant quality in sensor manufacturing as well as detector structures, the so-called Low Gain Avalanche Diodes (LGAD), with internal gain, sufficient to compensate a loss of carrier density in diode base region, are anticipated to be considered. The unveiled reactions among dopants and radiation defects and the dopant activity transformations under local strain due to introduction of Ge atoms into Si lattice comprise the novelty in this work. Governing of efficient doping, combining of thermal and pressure regimes within GaN crystal growth intended to suppress the high densities of technological extended defects, expedient introduction of Mg and Mn elements in order to grow the high resistivity bulk materials in fabrication of thick GaN radiation sensors also comprise scientific and technological novelty of this research. Comprehensive control techniques and regimes of thermal anneal procedures in suppression and manipulation of the electrical activity of the radiation induced defects also comprises the technological novelty. Models of detector current components are proposed and approved for analysis of carrier transport, of thermal emission and recombination processes also comprise methodical novelties. The methods of the simultaneous dosimetry probe positioning and profiling of the accumulated dose embody technological novelty of this study addressed to creation of technology of the brachytherapy planning verification. |
