| Title |
TAŠKINIŲ DEFEKTŲ TYRIMAS SILICYJE ANALIZUOJANT INFRARAUDONŲJŲ SPINDULIŲ ABSORBCINIUS SPEKTRUS / |
| Translation of Title |
The interstitial of point defects in silicon analysis with infrared absorption spectrums. |
| Authors |
Raščiūtė, Irma |
| Full Text |
|
| Pages |
74 |
| Keywords [eng] |
Point defects and their complexes ; FT - IR spectroscopy ; Oi and Cs concentration changes |
| Abstract [eng] |
The work deals with Cz-Si X-ray generation point defects and their complexes. The first chapter examined point defect classification and X-ray radiations of interaction with the material. The second chapter discussed the investigative modalities of defects.The third chapter analyzed create radiations defects and their complexes, created in the silicon single crystal and the influence of crystal defects physical properties.Discussed the possibility of defects identification by using FT - IR spectroscopy.The fourth chapter in the analysis of the absorption spectra. Also evaluated the main impurities Oi and Cs, Cz - Si concentration changes in an attempt to associate them with the defect reactions, taking place in a crystal. The annexes contain a MathCad calculations and compact disk. |
| Type |
Master thesis |
| Language |
Lithuanian |
| Publication date |
2010 |
