| Title |
Taškinių defektų, susijusių su priemaišiniu deguonimi, tyrimas silicio monokristale, panaudojant Furje transformacijos infraraudonųjų spindulių spektroskopiją / |
| Translation of Title |
The investigation of point defects related with oxygen impurities in silicon monocrystal using Fourier transform infrared spectrometer. |
| Authors |
Urbonavičiūtė, Akvilė |
| Full Text |
|
| Pages |
54 |
| Keywords [eng] |
point defects ; oxygen impurities ; FT-IR spectrometer |
| Abstract [eng] |
The Master’s thesis consists of an introduction, 4 chapters, 10 subchapters, conclusions, 42 references of literature and the annexes. There are 40 pictures in this work. The volume of the work is 54 pages without the annexes. There is attached a compact disc. The point defects related with oxygen impurities are being analyzed using Fourier transform infrared spectroscopy (FT-IR). The first chapter is up for the defects in crystals, their classification and the variety of defects complexes. In the second chapter there are discussed the reactions of point defects. The third chapter is analyzing FT-IR method, discussing the optical properties of silicon. The fourth chapter presents the IR absorption spectrum of polished and unpolished silicon wafers. There are also estimated the coefficients of absorption in monocrystal before using X-ray and after it, trying to relate them with some kind of reactions between impurities. The annexes contain MathCad calculations. |
| Type |
Master thesis |
| Language |
Lithuanian |
| Publication date |
2011 |
