| Abstract [eng] |
Resume: Significant progress has been made in the development of GaAsBi quantum structure growth technology, which can be used in a wide range of optoelectronic applications, including laser diodes, light-emitting diodes, photodetectors, spintronic devices, etc. Bismides have attracted considerable attention due to their unique physical properties, such as a large reduction in band-gap, spin-orbit splitting, and lower temperature sensitivity compared to traditional III-V semiconductor compounds. This thesis presents a comprehensive study of the growth of GaAsBi layers and quantum structures by MBE on GaAs substrates. The study focuses on optimizing the growth parameters to control the structural and optical properties of the material. The study successfully established the optimum growth conditions for the formation of 100 nm thick GaAsBi epitaxial layers with a Bi concentration of 10%, which can be used for the fabrication of GaAsBi detectors. In this work, the use of the analog alloy grading technique for the growth of parabolic GaAsBi quantum wells is demonstrated for the first time. It is shown that parabolic GaAsBi quantum wells exhibit more than 50 times higher photoluminescence intensity compared to rectangular multiple GaAsBi quantum wells. This study also determined the optimal growth parameters for the formation of parabolic quantum wells in both AlGaAs and GaAsBi laser diodes. A laser diode with a parabolic GaAsBi quantum well in the active region is demonstrated for the first time. |
