Abstract [eng] |
The work „IMPURITIES SUPERDIFFUSION MODELING IN Si CRYSTAL LATTICE AFFECTED BY SOFT X-RAYS“ consists of an introduction, 9 chapters, conclusions, 14 literary sources. The work of the 25 images. Working volume of 54 pages. The paper examines the in silicon generated soft X-rays, examined the diffusion coefficient dependence on oscillation frequency of atoms arrays, arrays of parameters, absorption of excited crystal. |