| Abstract [eng] |
In this work is considered the peculiarities of carrier scattering in silicon irradiated with fast electrons and reactor neutrons, by large fluences, examining the characteristics of galvanomagnetic phenomena. It is also considered photoconductivity characteristics in silicon irradiated with reactor neutrons. For the investigation of the radiation defects transformations after annealing, were used deep level transient spectroscopy and the contactless temperature dependent carrier trapping lifetime spectroscopy. In the introduction is discusses research problems, scientific importance, novelty and practical benefits. The first section provides an overview of work-related research results and major research methodology. In the second chapter are introduced research methodology and the examined samples. In the third chapter is discussed the research results in electron irradiated Si, examining the galvanomagnetic characteristics, and the conditions for reliable carrier scattering features are estimated. In the fourth chapter are discussed Hall and photo-ionization spectroscopy studies in Si structures irradiated by reactor neutrons, when the radiation defect clusters is formed. The fifth chapter reveals defects transformations after annealing in Si structures irradiated by the electrons. There was revealed the decrease of deep acceptor concentrations due to increase of shallow acceptor concentration. The main conclusions are given at the end of the work. |
