| Title |
Compact terahertz devices based on silicon in CMOS and BiCMOS technologies / |
| Authors |
But, Dmytro B ; Chernyadiev, Alexander V ; Ikamas, Kęstutis ; Kołaciński, Cezary ; Krysl, Anastasiya ; Roskos, Hartmut G ; Knap, Wojciech ; Lisauskas, Alvydas |
| DOI |
10.24425/opelre.2023.144599 |
| Full Text |
|
| Is Part of |
Opto-electronics review.. Warsaw : Polska Akademia Nauk. 2023, vol. 31, iss. 2, art. no. e144599, p. [1-10].. ISSN 1230-3402. eISSN 1896-3757 |
| Keywords [eng] |
CMOS ; teraFET ; terahertz ; THz detectors ; THz emitter |
| Abstract [eng] |
This paper reports on compact CMOS-based electronic sources and detectors developed for the terahertz frequency range. It was demonstrated that with the achievable noise-equivalent power levels in a few tens of pW/√Hz and the emitted power in the range of 100 µW, one can build effective quasi-optical emitter-detector pairs operating in the 200–266 GHz range with the input power-related signal-to-noise ratio reaching 70 dB for 1 Hz-equivalent noise bandwidth. The applicability of these compact devices for a variety of applications including imaging, spectroscopy or wireless communication links was also demonstrated. |
| Published |
Warsaw : Polska Akademia Nauk |
| Type |
Journal article |
| Language |
English |
| Publication date |
2023 |
| CC license |
|
