| Abstract [eng] |
The thesis is aimed at optimizing the issues of currently relevant InGaN LEDs production steps. The dissertation has three main objectives: determination of the optimal characterization method of InGaN MOCVD-grown epitaxial layers, development of a simple and low cost prototyping method of LEDs with custom die geometry, development and realization of the measurement method which enables the assessment of main LED performance-limiting factors. The feasibility of revealing structural disorder in a quantum well is demonstrated by measuring the stretch exponential decay laws in samples investigated using a frequency-domain lifetime measurement setup with a violet laser diode as an excitation source. Moreover, an innovative prototyping method, applying inclined and self-limited laser ablation regime, is also proposed. Finally, Shockley-Read-Hall, radiative and Auger recombination coefficients, defining the performance of working LED, were revealed by using a novel small-signal frequency-domain lifetime measurement technique, with extended measurable forward current range. |
