| Abstract [eng] |
Semiconductor structures are significantly affected by impurities and defects, with elastic backscattering spectroscopy being a vital method for defect evolution studies. The energy spectra of backscattered particles provide insights into atomic composition of the sample, impurity profiles, and crystalline defects. The energy of the detected particles depends on many factors, making the interpretation of experimental spectra practically impossible without the use of specialized software. To facilitate the process of interpreting spectra, two new open-source models were developed for numerical simulations of proton backscattering spectra from both amorphous and crystalline materials. These models allow for the utilization of various stopping powers, reaction cross-sections, physical processes, and more. The simulated spectra of protons, helium, and lithium ions closely match experimental results and those obtained using commercial tools for various optical coatings. The comparison of simulated backscattering spectra from Si, SiC, SiO2, and diamond crystals with experimental data showed excellent agreement. However, the modeling results are influenced by ion beam divergence and sample temperature. Additionally, modifications were made to the original channeling model in the GEANT4 environment, achieving deviations of less than 20% from experimental values for stopping powers in silicon, germanium, and gallium arsenide crystals when bombarded with 1–20 MeV proton and deuteron beams. |
