| Title |
Puslaidininkinių įvairiatarpių darinių, skirtų mikrobangų elektronikai, elektrinių savybių tyrimas / |
| Translation of Title |
Investigation of electric properties of semiconductor heterostructures for microwaves electronics. |
| Authors |
Paškevič, Česlav |
| Full Text |
|
| Pages |
36 |
| Keywords [eng] |
Voltage–power sensitivity ; drift velocity ; mobility |
| Abstract [eng] |
The dissertation has presented study on voltage–power sensitivity of the microwave diodes, electron drift velocity and mobility of charge carriers. In this dissertation there is surveyed hot carriers determined electromotive force and measuring methods. There is short information about semiconductor heterostructures and their application to semiconductor devices. The research methodology is presented as well as methods of charge carriers heating are described and heterostructures electric parameters measuring scheme are given. It describes usage of manual and automated equipment measurement of current-voltage characteristics which were used to estimate the drift velocity of the charge carriers. Also, there is short information about design of used nanostructures. Dissertation presents experimental results of electron transport of investigated structures. Results of the research of electron saturation drift velocity in the electric field are presented in the dissertation, also. It is shown that changing the heterojunction structure and inserting thin InAs layers can change electron drift velocity and mobility of electrons in heterojunction structure. Experimental results had shown that insertion of phonon walls into quantum well reduced the electron scattering rate and increased the value of saturation electron drift velocity. Moreover, during investigation of the carriers drift velocity it was noticed that saturation drift velocity of electrons in InAlAs/InGaAs/InAlAs heterojunction can be 5 times higher than the maximum saturation drift velocity of electrons in bulk GaAs and it is dependent on the inserts in investigated heterojunctions. In this way can to increase the speed of semiconductor devices. |
| Type |
Summaries of doctoral thesis |
| Language |
Lithuanian |
| Publication date |
2012 |
