Title Laser-patterned alumina mask and mask-less dry etch of Si for light trapping with photonic crystal structures /
Authors Maksimovic, Jovan ; Mu, Haoran ; Smith, Daniel ; Katkus, Tomas ; Vaičiulis, Mantas ; Aleksiejūnas, Ramūnas ; Seniutinas, Gediminas ; Ng, Soon Hock ; Juodkazis, Saulius
DOI 10.3390/mi14030550
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Is Part of Micromachines.. Basel : MDPI. 2023, vol. 14, iss. 3, art. no. 550, p. [1-14].. eISSN 2072-666X
Keywords [eng] ablation ; dry etch ; Lambertian limit ; light trapping ; Si solar cells
Abstract [eng] Ultra-short 230 fs laser pulses of a 515 nm wavelength were tightly focused onto 700 nm focal spots and utilised in opening ∼0.4–1 μm holes in alumina Al2O3 etch masks with a 20–50 nm thickness. Such dielectric masks simplify the fabrication of photonic crystal (PhC) light-trapping patterns for the above-Lambertian performance of high-efficiency solar cells. The conditions of the laser ablation of transparent etch masks and the effects sub-surface Si modifications were revealed by plasma etching, numerical modelling, and minority carrier lifetime measurements. Mask-less patterning of Si is proposed using fs laser direct writing for dry plasma etching of Si.
Published Basel : MDPI
Type Journal article
Language English
Publication date 2023
CC license CC license description