| Title |
Krūvininkų dinamikos InGaN tyrimas liuminescencijos su erdvine skyra metodais / |
| Translation of Title |
Study of carrier dynamics in InGaN using spatially-resolved photoluminescence techniques. |
| Authors |
Dobrovolskas, Darius |
| Full Text |
|
| Pages |
32 |
| Keywords [eng] |
InGaN ; quantum wells ; photoluminescence ; spatial distribution ; microscopy |
| Abstract [eng] |
The thesis is aimed at gaining new knowledge on carrier localization and recombination in InGaN epilayers and structures by using photoluminescence spectroscopy with sub-micrometer spatial resolution. Optical characterization is combined with the structural analysis to provide a deeper insight into peculiarities of InGaN luminescence. Studies of InGaN epitaxial layers showed the relaxed layers to contain nanocolumn-like structures that additionally contribute to inhomogeneous photoluminescence distribution in InGaN layers. The feasibility of suppressing the defect-related emission in InGaN epilayers by laser annealing is demonstrated. The influence of unintentional annealing at elevated temperatures during fabrication of InGaN structures is revealed. A novel interpretation for negative correlation between photoluminescence intensity and band peak wavelength in high-indium-content InGaN multiple quantum wells is suggested. The enhancement of emission efficiency in InGaN quantum wells due to coupling of the optical dipole with localized surface plasmons in silver nanoparticles is investigated and the influence of potential fluctuations on the coupling with localized surface plasmons is revealed. |
| Type |
Summaries of doctoral thesis |
| Language |
Lithuanian |
| Publication date |
2013 |
