| Title |
Vakansijų ir priemaišų atomų difuzija silicyje, inicijuota Rentgeno spinduliais / |
| Translation of Title |
Vacancies and impurities atoms diffusion in silicon, generated by X-rays. |
| Authors |
Kiriliauskis, Mindaugas |
| Full Text |
|
| Pages |
34 |
| Keywords [eng] |
Vacancy ; impurity atom ; diffusion ; silicon ; X-rays |
| Abstract [eng] |
The topic of master’s work is “Vacancies and impurities atoms diffusion in silicon, generated by X-rays”. The master’s work consists of introduce, two parts, conclude and the list of used literature. The size of the work is 34 pages. This work has 16 pictures and 3 tables. In the first part – “The theoretical part” – are introduced to the work’s theory, are given electrical and X-rays radiation Bragg’s reflection methods for calculations of concentration of vacancies and diffusion coefficients of vacancies in silicon. In the second part – “The practical part” – X-rays radiation Bragg’s reflection methods are applied for experimental measurements for calculations of concentration of vacancies and diffusion coefficients of vacancies in silicon. Gotten concentrations of vacancies using Bragg’s reflections coincide with electrical results of measurements, that proves correctness of theory. |
| Type |
Master thesis |
| Language |
Lithuanian |
| Publication date |
2009 |
