| Title |
Radiacijos generuoti taškiniai defektai ir jų reakcijos / |
| Translation of Title |
Point defects generated by radiation and their reactions. |
| Authors |
Stuknys, Vaidas |
| Full Text |
|
| Pages |
53 |
| Keywords [eng] |
Rentgen radiance ; FT-IR spectroscopy ; Point defects |
| Abstract [eng] |
In this work, we are researching radiation defects and their reactions in silicon. During experiments defects were generated using soft Rentgen radiance. Later samples were researched using FT-IR methods of spectroscopy. Work amount is 52 pages. Work consists from 5 parts. First part - overview of sources and features of Rentgen radiance. Second part – radiation defects in silicon. Third part – methods of defect researching. Fourth part – reactions of defects. Fifth part – Methods and results of experiment. |
| Type |
Master thesis |
| Language |
Lithuanian |
| Publication date |
2009 |
