| Abstract [eng] |
Heterostructures of transition metal disulfides (TMD’s) have unique mechanical, thermal, electrical and optical properties which differ with structure thickness. However, the function of such compounds is not well understood using known models. The study of mentioned properties of these structures yields characteristic parameters suitable not only for modeling their working principle, but also describing the criteria for technological conditions to form a heterostructure of predicted parameters. In this work, we prepared six different samples of p-Si/MoS2 by changing the parameters of sulfurization process. The samples were treated with a different temperature and different flow of sulfur during sulfurization. Electrical measurements were performed in order to obtain I-V and C-V characteristics from which p-Si/MoS2 structure characterizing parameters were calculated. By comparing values of the parameters, we were able to quantitatively distinguish samples in which MoS2 was fully formed and managed to describe the differences between those samples in which MoS2 was not fully formed. Along with electrical measurements we performed Raman spectroscopy and scanning probe microscopy measurements. Both methods agreed with our results from electrical measurements and also demonstrated that electrical measurements were more informative regarding the analysis of p-Si/MoS2 structure. It is also safe to say, that electrical measurements can be used as an efficient method to describe transitional p-Si/MoS2 structures. In case of sulfurization parameters, the most optimal sulfurization temperature and the most optimal flow of gaseous mix of S/Ar during sulfurization was clarified to be 500 ⁰C and 150 l/h accordingly. The samples in which MoS2 was formed very poorly, were manufactured using 100 l/h S/Ar flow and 600 ⁰C temperature. |
