| Title |
Carrier recombination in wide-band-gap nitride semiconductors / |
| Translation of Title |
Krūvininkų rekombinacija plačiatarpiuose nitridiniuose puslaidininkiuose. |
| Authors |
Mickevičius, Jūras |
| Full Text |
|
| Pages |
124 |
| Keywords [eng] |
nitride semiconductors ; quantum wells ; carrier dynamics ; photoluminescence |
| Abstract [eng] |
The thesis is dedicated to carrier recombination investigations in wide-band-gap semiconductors and their structures. The complex experimental studies were performed by combining several different techniques. Carrier dynamics in GaN epilayers were investigated under extremely low and high excitation conditions. A new method for interpreting photoluminescence decay kinetics was suggested by interrelating luminescence and light-induced grating decay transients. The new approach for studies of yellow band in GaN was shown by linking the carrier lifetime with yellow band intensity. Two AlGaN epilayers grown by different novel growth techniques were compared and the factors limiting carrier lifetime were identified. Moreover, more evidence on alloy mixing and band potential fluctuations in AlGaN was provided by our study. Essential knowledge was attained about carrier dynamics in high-Al-content AlGaN/AlGaN multiple quantum well structures: the influence of built-in electric field and carrier localization on carrier dynamics. Most of the samples under study were grown by MEMOCVDTM growth technique, and our study confirmed the high potential of this innovative growth technique for improving material quality. |
| Type |
Doctoral thesis |
| Language |
English |
| Publication date |
2009 |
