| Title |
Investigation of DC, microwave characteristics and noise in SiGe and A3B5 heterojunction bipolar transistors / |
| Translation of Title |
Aukštadažnių SiGe ir A3B5 įvairialyčių dvipolių tranzistorių statinių, mikrobangių charakteristikų ir triukšmo tyrimas. |
| Authors |
Šimukovič, Artūr |
| Full Text |
|
| Pages |
23 |
| Keywords [eng] |
noise ; heterojunction bipolar transistors ; SiGe HBT ; InGaP HBT. |
| Abstract [eng] |
Modern Si/SiGe, AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) exhibit high-speed and high-frequency operation, high gain, low noise and low signal distortion. This work deals with an investigation of DC, microwave and noise characteristics of Si/SiGe and InGaP/GaAs HBTs in the relevant frrequency range of 1-30 GHz. Noise simulation and modeling of HBTs have been performed including correlation of shot noise sources, impact ionization and temperature dependences. Analytical model for bipolar transistor, based on π- type equivalent circuit was derived and implemented in the bipolar transistor compact model HICUM. This compact model HICUM version includes correlation between base and collector current noise sources. The noise behavior resulting from impact ionization was investigated at room temperature for SiGe HBTs. Modeling was performed with a hydrodynamic model, drift - diffusion models and the compact model HICUM using a Chynoweth’s law for avalanche generation. DC, high frequency characteristics and noise of SiGe HBTs were investigated in a wide ambient temperature range 4 – 423 K Both hydrodynamic device simulation and compact model HICUM view agreement with experimental data only in the temperature range of 300 – 423K. |
| Type |
Summaries of doctoral thesis |
| Language |
English |
| Publication date |
2010 |
