| Abstract [eng] |
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation of physical properties of semiconductors. This work focuses on the semiconductor research when generating terahertz pulses from a variety of semiconductor surfaces. THz radiation from semiconductor surfaces can be generated on a whole range of physical mechanisms: the surface field screening, photo-Dember effect, the optical rectification, electric field induced optical rectification, plasma oscillations, coherent phonons and plasmons. A number of important semiconductor parameters such as refractive index, mobility, carrier relaxation time and higher conductivity valley positions can be measured using THz generation from semiconductor surface technique. In this work THz radiation generation mechanisms were investigated when changing excitation conditions: ambient temperature, magnetic field, laser wavelength and intensity, pulse duration. After tests with variety different semiconductors it was found that p-InAs is the best surface emitter when excitation laser wavelength is 800 nm. Using THz excitation spectroscopy the intervalley distances were measured directly, for the first time, in two InxGa1-xAs, InAs and InSb samples. |
