| Abstract [eng] |
The aim of this work was to develop new methods for molecular beam epitaxy to form quantum cascade lasers operating in the 3-15 µm wavelength range and lithography-free thermal emitters. The proposed new arsenic flux tuning methodology enabled the achievement of high-quality crystalline layers for quantum cascade laser structures and made the growth process of these structures easier. The formed lasers exhibited a particularly high operating temperature, reaching up to 108 ℃. Additionally, the foundations were laid for the technology of forming thermal emitters operating in this spectral range. The practical application of ENZ materials was demonstrated, along with the ability to control the emission peak position of thermal emitters by varying the doping of these materials. Thermal emitters based on ENZ exhibited exceptionally high emission peak stability with changing operating temperature. Furthermore, these thermal emitters, acting as plasmonic thermal radiation filters, exhibited a very narrow emission wavelength full-width at half maximum and polarization. In addition, during this work, components necessary for the production and testing of quantum cascade lasers were designed. The measured performance parameters of the devices were comparable to or even better than the results of other authors and were in agreement with theoretical models. |
