| Title |
Optical and Electrical Investigation of GaN-based HEMT and Graphene Structures for Applications in THz Detection / |
| Translation of Title |
GaN-pagrindu HEMT ir grafeno struktūrų, skirtų THz detektavimui, optinių ir elektrinių savybių tyrimas. |
| Authors |
Jorudas, Justinas |
| DOI |
10.15388/vu.thesis.670 |
| Full Text |
|
| Pages |
223 |
| Keywords [eng] |
AlGaN/GaN ; HEMT ; graphene ; THz ; pyrolytic carbon |
| Abstract [eng] |
ecently, GaN has emerged as a material platform, promising to push the boundaries of electronic devices and THz detectors capabilities. GaN is a direct bandgap III-V group compound semiconductor and garnered significant attention over the last decades due to its exceptional breakdown field in tandem with high electron saturation velocity. Graphene, a two-dimensional carbon allotrope with atoms arranged in a hexagonal lattice and having zero bandgap has captivated the scientific community since its discovery due to its remarkable properties, such as unparalleled thermal conductivity and extraordinary electrical conductivity. Integrating graphene with GaN semiconductors offers the potential to enhance device performance and explore novel applications. This work is devoted to investigation of THz/IR-range optical and electrical properties of two different materials - GaN heterostructures and graphene structures for a possible integration in THz detection applications. Furthermore, integration of GaN and graphene presents a promising avenue for overcoming the limitations of current semiconductor technologies. |
| Dissertation Institution |
Vilniaus universitetas. |
| Type |
Doctoral thesis |
| Language |
English |
| Publication date |
2024 |
