| Abstract [eng] |
Group III semiconductors have been relevant for applications in electronics and optoelectronics for several decades, with many devices already realized and in production. InGaN, which was the basis for the creation of one of the first high-efficiency blue LEDs, remains one of the most promising compounds for future technologies. However, due to the inherent defects in the material and their high density, the optical properties do not meet the standards required for modern applications. The influence of defects on the InGaN/GaN active medium negatively affects quantum well structure emission and transient times. Defects often act as non-radiative recombination centers, so as their quantity increases, the number of carriers participating in non-radiative recombination also increases. This work investigates the spatial and temporal cathodoluminescence properties of InGaN's characteristic V-type and trench defects, their environment and overall properties while profiling transient times and cathodoluminescence intensity in retrospective to defect size, which is believed to be a crucial parameter affecting the listed properties. |
