| Abstract [eng] |
Silicon is one of the most important elements in electronics and technology industries which is why it is a particularly popular subject for scientific research. When irradiated by ultrashort laser pulses, interesting phenomena happen in silicon even before reaching the fluence threshold – oxidation, melting, amorphization and recrystallization. Silicon amorphization occurs when the melted material solidifies faster than it can reorder itself back to an organised crystalline state. Amorphous silicon has a higher refractive index and resistivity to chemical etching which allows it to be used in waveguide production and maskless lithography. Silicon amorphization depends on a great number of parameters, including but not limited to laser wavelength, number of pulses, pulse energy, and duration. Despite the amount of works on the subject, the influence of all the parameters on silicon amorphization is not yet well known. The aim of this study is to investigate the influence of laser burst mode and wavelength on silicon amorphization using femtosecond pulses. |
