| Title |
Taškinių defektų, generuotų rentgeno spinduliuote silicyje, reakcijų kinetika / |
| Translation of Title |
The Reactions Kinetics of Point Defects Generated by X- Rays in Silicon. |
| Authors |
Busilas, Valdas |
| Full Text |
|
| Pages |
54 |
| Keywords [eng] |
Defects ; points ; oxygen |
| Abstract [eng] |
There is attached a compact disc. The point defects related with oxygen impurities are being analyzed using Fourier transform infrared spectroscopy (FT-IR). The first chapter is up for the defects in crystals, their classification. In the second chapter there are discussed the chemical reaction kinetics. The third chapter is analyzing with oxygen-related defects in reactions. The fourth chapter presents experimental methodology and results. Work was to evaluate the silicon single crystal point defect absorption coefficients before and after irradiation, X-rays. The findings absorption coefficients we used the ongoing defect reactions. Annexes to the calculations we made using the MathCad program. |
| Dissertation Institution |
Šiaulių universitetas. |
| Type |
Master thesis |
| Language |
Lithuanian |
| Publication date |
2014 |
