| Abstract [eng] |
Silicon based solar cells are the most commercialized type of solar cells. However expanding the potential of the silicon solar cells is a key issue for the future research. One of the ways to increase silicon solar cell efficiency is lowering the total reflectivity of silicon surface. The aim of the paper – to form structured silicon surface using nickel assisted chemical etch (NACE) and to form that structure repeatable p-n junction. For NACE silicon structuring contiguous nickel (Ni) layer enhanced etching was used. Using photolithography at the surface periodical arrangement of Ni circled layers layout was formed. Silicon etching and structure formation investigated by changing etching parameters: thickness of Ni layer, etching time and HF concentration at etching solution. The height of formed structure varies from 100 to 400 nm. Furthermore silicon structuring with contiguous nickel (Ni) layer enhanced etching was used. It was measured that reflectivity of this structure is (1.98±0.07) % in visible light spectrum and the “black silicon” surface is formed. In the end of this work, black silicon solar cell was formed. I – V characteristics of newly formed solar cell showed that efficiency of solar cell made by nickel assisted chemical etch surface structuring is higher than efficiency of solar cell with polished surface. |
