| Abstract [eng] |
This work presents the design, growth, and characterization of InGaAs- and GaAsBi-based VECSELs for near-infrared emission. Structures were engineered for optimal optical and thermal performance using MBE and advanced simulation. Reproducible incorporation of up to 10 % bismuth into the GaAs lattice was achieved by growing under temperature-limited kinetics. The concept of proof was tested on laser diodes with gain area consisted of 3 rectangular GaAsBi quantum wells. An innovative design of GaAsBi-based MQWs with parabolically graded AlGaAs barriers, combined with thermal engineering, led to reduction of the lasing threshold at room temperature by at least 30% and enhancement of stimulated emission by more than an order of magnitude. Lasing of VECSEL was achieved in both material systems. A novel VECSEL architecture employing GaAsBi QW pairs with alternating GaAs barrier thickness enabled an increase in active device area, improved pumping efficiency, and simplified heat management. These advances pave the way for efficient, thermally robust devices for high-power photonic applications. |
