| Title |
Interplay between extended and point structural defects in BGaN/SiC epitaxial layers grown by MOCVD |
| Authors |
Romanitan, C ; Mickevičius, Jūras ; Djourelov, N ; Serban, A.B ; Brincoveanu, O ; Kadys, Arūnas ; Malinauskas, Tadas ; Mihalache, I ; Pavelescu, E. M |
| DOI |
10.1016/j.jallcom.2025.184763 |
| Full Text |
|
| Is Part of |
Journal of alloys and compounds.. Elsevier BV. 2025, vol. 1045, art. no. 184763, p. [1-8].. ISSN 0925-8388 |
| Keywords [eng] |
Boron gallium nitride ; reciprocal space maps ; threading dislocations ; point defects ; positron annihilation spectroscopy |
| Abstract [eng] |
Formation of point defects in BGaN/SiC epilayers grown by metal-organic chemical vapor deposition was investigated by positron annihilation spectroscopy in conjunction with X-ray diffraction, photoluminescence and scanning electron microscopy. The increase in the point defect density was associated with the introduction of boron atoms and manifested in the rising relative intensity of the defect-related photoluminescence band. An increase in boron content in the layer up to 3.4 % resulted in higher densities of both threading dislocations and point defects, and the interplay between different types of defects is discussed. Further increase in boron content up to 5.6 % led to a strong increase in dislocation density, accompanied by a reduction in point defect density and formation of defect complexes. Surface morphology investigations revealed the formation of complex crystallites, as seen by scanning electron microscopy. |
| Published |
Elsevier BV |
| Type |
Journal article |
| Language |
English |
| Publication date |
2025 |
| CC license |
|
