| Title |
Stabilization of transport properties in thin nonstoichiometric La1−xSrxMnyO3 films via accelerated aging for magnetic field sensors |
| Authors |
Rudokas, Vakaris ; Koliada, Mykola ; Stankevič, Voitech ; Keršulis, Skirmantas ; Vertelis, Vilius ; Tolvaišienė, Sonata ; Skapas, Martynas ; Vagner, Milita ; Plaušinaitienė, Valentina ; Žurauskienė, Nerija |
| DOI |
10.3390/s26092711 |
| Full Text |
|
| Is Part of |
Sensors.. Basel : MDPI. 2026, vol. 26, iss. 9, art. no. 2711, p. 1-15.. eISSN 1424-8220 |
| Keywords [eng] |
polycrystalline manganite films ; magnetic field sensors ; colossal magnetoresistance ; aging effects |
| Abstract [eng] |
Magnetic sensors based on the colossal magnetoresistance (CMR) effect in manganite thin films are promising for high-field measurements due to their wide operating range, low magnetoresistance anisotropy, and ability to function without full saturation at extremely high magnetic fields. However, the long-term stability of their transport properties remains a key challenge for practical sensor applications. In this work, accelerated aging of nanostructured La1−xSrxMnyO3 thin films was investigated for two manganese compositions: nominally stoichiometric (y = 1.05) and Mn-excess (y = 1.15). The electrical resistivity and magnetoresistive properties strongly depended on the manganese content and substrate type. Accelerated aging was induced by annealing at 100 °C in an argon atmosphere, and the evolution of the transport properties was analyzed using a stretched-exponential relaxation model. The analysis of the extracted parameters indicated defect-related mechanisms governing transport stability. It was found that despite the increase in resistivity during thermal treatment, the magnetoresistance changes were insignificant. The results provide insights into the aging behavior of nonstoichiometric manganite films and offer guidance for optimizing stabilization procedures in CMR-based magnetic field sensors. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2026 |
| CC license |
|
