| Abstract [eng] |
Terahertz photonics and electronics (1 THz=1012 Hz) remains one of the „hottest“ topics in optics, optoelectronics, solid state physics and nanotechnology fields. Aim of terahertz science and technology is not only to create compact and convenient THz spectroscopic and imaging systems, but also to find new ways to control THz radiation by using components of diffractive optics. However, when dimensions become smaller and system is expected to be fabricated onto one chip, because of a relatively large depth of metal diffusion, metallization becomes not suitable to form THz diffractive optics anymore. An alternative to metal materials can be found carbon nanomaterials. In this work I have implemented the fabrication technology of graphene layer transfer on silicon wafer and evaluation of graphene quality by using four probe measurement and Raman spectroscopy. Two different THz measurement techniques - THz Time Domain Spectroscopy and THz Continuous Wave –imaging systems are discused and employed to investigate prepared samples. Specimen containing one, two and three graphene layers has been analysed. Usage of THz-TDS system enabled to evaluate graphene parameters, such as electric conductance, scattering time, carrier density and carrier mobility. It is demonstrated that THz-CW system can be suitable for graphene layers quality control. It is observed that composite of graphite layer, placed on silicon wafer, can exhibit transparency enhancing coating features in THz frequency range. |
