| Abstract [eng] |
GaN and diamond materials are two of the most promising WBG semiconductors for fabrication of radiation tolerant particle detectors. Therefore, characterization of defects is of paramount importance in evaluation of the material suitability for production of particle detectors. Experimental results presented in this thesis have been obtained by using PL, DLTS, MW-PC and other methods. In order to analyse radiation-induced defects, GaN samples were irradiated by neutrons. In situ measurements during proton irradiation were performed by combining the optical (PI-L) and electrical (BELIV) methods in order to analyse the performance of thin MOCVD epilayer GaN-based sensors during irradiation by 1.6 MeV protons. The transient current technique (TCT) measurements allow a direct evaluation of the most important parameters. In this work, the depth-distribution of native defects in diamond wafers has been identified within the profiles of current transients measured by scanning location of a focused injection beam. Despite significant progress in development of WBG semiconductors based detectors, Si is the most used semiconductor for tracking detectors at CERN. In this work, the annealing-induced transformations of defects in heavily irradiated Si have been studied by combining the current-mode deep-level transient spectroscopy and the temperature dependent carrier trapping lifetime techniques. |
