Gain-layer project

Niels G Sorgenfrei; Anna Rita Altamura; Cristina Besleaga; Georgia Andra Boni; Tomas Čeponis; Paul Erberk; Eckhart Fretwurst; Yana Gurimskaya; Kevin Lauer; Ludovico Massaccesi; Luca Menzio; Michael Moll; Marie Mühlnikel; Andrei Nitescu; Ulrich Parzefall; Roxana-Elena Patru; Jevgenij Pavlov; Ioana Pintilie; Stephanie Reiss; Joern Schwandt; Valentina Sola

doi:10.1016/j.nima.2026.171757

Title	Gain-layer project
Authors	Sorgenfrei, Niels G ; Altamura, Anna Rita ; Besleaga, Cristina ; Boni, Georgia Andra ; Čeponis, Tomas ; Erberk, Paul ; Fretwurst, Eckhart ; Gurimskaya, Yana ; Lauer, Kevin ; Massaccesi, Ludovico ; Menzio, Luca ; Moll, Michael ; Mühlnikel, Marie ; Nitescu, Andrei ; Parzefall, Ulrich ; Patru, Roxana-Elena ; Pavlov, Jevgenij ; Pintilie, Ioana ; Reiss, Stephanie ; Schwandt, Joern ; Sola, Valentina
DOI	10.1016/j.nima.2026.171757
Full Text
Is Part of	Nuclear instruments and methods in physics research, Section A: Accelerators, spectrometers, detectors and associated equipment.. Amsterdam : Elsevier B.V.. 2026, vol. 1091, art. no. 171757, p. 1-10.. ISSN 0168-9002
Keywords [eng]	defect spectroscopy ; DLTS ; electrical characterisation ; GLPD (gain-layer project diode) ; LGAD ; p-type silicon ; SIMS
Abstract [eng]	Gain-layer degradation from exposure to radiation limits the use of Low-Gain Avalanche Diodes (LGADs) in high energy particle physics detector experiments. Proper understanding of how the gain-layer is altered is not available on a defect level. Only measurements for materials with much lower effective doping concentrations are available. The direct study of the gain-layer is not possible with typical defect spectroscopy measurements like Thermally Stimulated Currents (TSC) and Deep-Level Transient Spectroscopy (DLTS). To combat this problem and gain a better understanding of the processes which degrade LGADs, the Gain-Layer Project was started. Within this project 19 050 diodes were produced with various Boron, Phosphorus, Oxygen and Carbon concentrations. The material used is low-resistivity p-type Silicon. The effective doping concentrations are in the order of typical LGAD gain-layers. These diodes will serve the defect community in the coming years for various studies. This article introduces this project with detailed descriptions of the diodes, their flavours and their processing, and reports on results from I–V, C–V, SIMS and DLTS measurements on unirradiated diodes.
Published	Amsterdam : Elsevier B.V
Type	Journal article
Language	English
Publication date	2026
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„Gain-layer project“