| Title |
Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses / |
| Authors |
Lisauskas, Alvydas ; Ikamas, Kęstutis ; Massabeau, Sylvain ; Bauer, Maris ; Čibiraitė, Dovilė ; Matukas, Jonas ; Mangeney, Juliette ; Mittendorff, Martin ; Winnerl, Stephan ; Krozer, Viktor ; Roskos, Hartmut G |
| DOI |
10.1063/1.5011392 |
| Full Text |
|
| Is Part of |
APL Photonics.. Melville, NY : AIP Publishing. 2018, vol. 3, iss. 5, art. no. 051705, p. [1-8].. eISSN 2378-0967 |
| Keywords [eng] |
THZ ; detectors ; radiation ; signal |
| Abstract [eng] |
We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage. |
| Published |
Melville, NY : AIP Publishing |
| Type |
Journal article |
| Language |
English |
| Publication date |
2018 |
