Title Significant carrier extraction enhancement at the interface of an InN/p-GaN heterojunction under reverse bias voltage /
Authors Svrcek, Vladimir ; Kolenda, Marek ; Kadys, Arūnas ; Reklaitis, Ignas ; Dobrovolskas, Darius ; Malinauskas, Tadas ; Lozach, Mickael ; Mariotti, Davide ; Strassburg, Martin ; Tomašiūnas, Roland
DOI 10.3390/nano8121039
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Is Part of Nanomaterials.. Basel : MDPI. 2018, vol. 8, iss. 12, art. no. 1039, p. [1-12].. ISSN 2079-4991. eISSN 2079-4991
Keywords [eng] InN/p-GaN heterojunction ; interface ; photovoltaics
Abstract [eng] In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(Vs)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.
Published Basel : MDPI
Type Journal article
Language English
Publication date 2018