| Title |
Optoelektronikos prietaisams skirtų GaᵧIn₁₋ᵧAs₁₋ₓBiₓ sluoksnių auginimas molekulinių pluoštų epitaksijos būdu / |
| Translation of Title |
Growth of GaᵧIn₁₋ᵧAs₁₋ₓBiₓ layers by molecular beam epitaxy for optoelectronic applications. |
| Authors |
Stanionytė, Sandra |
| ISBN |
9786094752650 |
| Full Text |
|
| Pages |
186 |
| Keywords [eng] |
GaᵧIn₁₋ᵧAs₁₋ₓBiₓ ; bismides ; optoelectronic ; THz |
| Abstract [eng] |
Bismuth-containing compounds are attractive due to the possibility of usage as emitters or detectors operating in the near- and mid- infrared spectrum region, solar cells, components of spintronic devices and terahertz (THz) frequency systems. THz time-domain spectroscopy systems based on GaAs are currently the most common, but they are large in size and expensive. They could be replaced by more compact and rather cheaper systems, operating in the range of telecommunication wavelengths (1−1.5 µm), if the components – emitters and detectors – would be produced from GaᵧIn₁₋ᵧAs₁₋ₓBiₓ compound. Orienting to the development of mid-range infrared radiation detectors, GaᵧIn₁₋ᵧAs₁₋ₓBiₓ compounds can also be useful because it is known that it is possible to achieve compounds in which the optical absorption edge moves up to 6 μm. Optimization of the growth conditions of GaᵧIn₁₋ᵧAs₁₋ₓBiₓ layers is described in this dissertation. Bismide-based THz components for 1.55 µm spectroscopic systems were made and compact THz time-domain spectroscopy system was fabricated. GaᵧIn₁₋ᵧAs₁₋ₓBiₓ layers with the absorption edge up to 2.3 µm were grown in this dissertation; the investigation of the influence of post-annealing process on the properties of quaternary compounds has showed the good prospective of their applications in optoelectronic devices. |
| Dissertation Institution |
Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras. |
| Type |
Doctoral thesis |
| Language |
Lithuanian |
| Publication date |
2019 |
