| Title |
Bi kvantinių taškų GaAsBi matricoje tyrimas peršviečiamąja elektronine mikroskopija / |
| Translation of Title |
Investigation of Bi quantum dots embedded into GaAsBi matrix by transmission electron microscopy. |
| Authors |
Skapas, Martynas |
| Full Text |
|
| Pages |
158 |
| Keywords [eng] |
Bi quantum dots ; electron microscopy ; optoelectronics |
| Abstract [eng] |
Bismuth-containing III-V compounds are promising as emitters operating in the near- and mid- infrared spectrum region. Unfortunately, the growth of laser structures for technologically important 1.55 µm wavelength range by using GaAs₁₋ₓBiₓ layers is difficult. This wavelength range can also be reached by using quantum dots less than 20 nm in diameter. Quantum dot formation by phase segregation during annealing allows simple technological route of controlling the size of such quantum dots by changing the thickness of quantum well layer. This method required in-depth nanoscale structural information of layer and structures formed. Transmission electron microscopy of GaAs₁₋ₓBiₓ layers and GaAs₁₋ₓBiₓ/AlAs multiple quantum well structures is described in this dissertation. Phase and elemental composition, as well as peculiarities of quantum dot distribution and mean size are presented in this work. Also, strain of quantum well layer and individual quantum dot was determined. |
| Dissertation Institution |
Vilniaus universitetas. |
| Type |
Doctoral thesis |
| Language |
Lithuanian |
| Publication date |
2019 |
