| Title |
Development of MOVPE pulsed growth technique for increased efficiency InGaN/GaN multiple quantum well structures / |
| Translation of Title |
MOVPE impulsinio auginimo technologijos kūrimas ir taikymas padidinto efektyvumo InGaN/GaN kvantinių duobių struktūrose. |
| Authors |
Dmukauskas, Mantas |
| Full Text |
|
| Pages |
148 |
| Keywords [eng] |
InGaN ; MQW ; MOVPE ; LED |
| Abstract [eng] |
In this thesis the experimental work of pulsed growth technique development for increased efficiency Indium Gallium Nitride (InGaN) quantum wells (QWs) by using metal-organic vapor phase epitaxy (MOVPE) is presented. Structural as well as optical qualities of InGaN QW were assessed and related to changes in carrier localization profile. The influence of pulse and pause duration as well as total growth time and growth temperature on InGaN QW characteristics were analyzed and optimal growth conditions for highest photo-luminescence intensity increase with a minor peak blueshift were suggested. Finally, pulsed growth technique was applied during the growth of InGaN light emitting diode structures. |
| Dissertation Institution |
Vilniaus universitetas. |
| Type |
Doctoral thesis |
| Language |
English |
| Publication date |
2020 |
