| Title |
Transient electrical and optical characteristics of electron and proton irradiated SiGe detectors / |
| Authors |
Čeponis, Tomas ; Deveikis, Laimonas ; Lastovskii, Stanislau ; Makarenko, Leonid ; Pavlov, Jevgenij ; Pūkas, Kornelijus ; Rumbauskas, Vytautas ; Gaubas, Eugenijus |
| DOI |
10.3390/s20236884 |
| Full Text |
|
| Is Part of |
Sensors.. Basel : MDPI. 2020, vol. 20, iss. 23, art. no. 6884, p. [1-12].. eISSN 1424-8220 |
| Keywords [eng] |
SiGe ; radiationdetectors ; electron and proton irradiations ; microwave probed photoconductivity ; pulsed barrier capacitance transients ; steady-state photo-ionization spectroscopy |
| Abstract [eng] |
The particle detector degradation mainly appears through decrease of carrier recombination lifetime and manifestation of carrier trapping effects related to introduction of carrier capture and emission centers. In this work, the carrier trap spectroscopy in Si1-xGex structures, containing either 1 or 5% of Ge, has been performed by combining the microwave probed photoconductivity, pulsed barrier capacitance transients and spectra of steady-state photo-ionization. These characteristics were examined in pristine, 5.5 MeV electron and 1.6 MeV proton irradiated Si and SiGe diodes with n+p structure. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2020 |
| CC license |
|
