| Title |
Antenna-coupled field-effect transistors as detectors for terahertz near-field microscopy / |
| Authors |
Wiecha, Matthias M ; Kapoor, Rohit ; Chernyadiev, Alexander V ; Ikamas, Kęstutis ; Lisauskas, Alvydas ; Roskos, Hartmut G |
| DOI |
10.1039/D0NA00928H |
| Full Text |
|
| Is Part of |
Nanoscale advances.. Cambridge : Royal Society of Chemistry. 2021, iss. 3, p. 1717-1724.. eISSN 2040-3372 |
| Keywords [eng] |
Field effect transistors ; THz ; CMOS ; THZ detector ; near-field microscopy |
| Abstract [eng] |
We report the successful implementation of antenna-coupled terahertz field-effect transistors (TeraFETs) as homodyne detectors in a scattering-type scanning near-field optical microscope (s-SNOM) operating with radiation at 246.5 GHz. The devices were fabricated in Si CMOS foundry technology with two different technologies, a 90 nm process, which provides a better device performance, and a less expensive 180 nm one. The high sensitivity enables s-SNOM demodulation at up to the 10th harmonic of the cantilever's oscillation frequency. While we demonstrate application of TeraFETs at a fixed radiation frequency, this type of detector device is able to cover the entire THz frequency range. |
| Published |
Cambridge : Royal Society of Chemistry |
| Type |
Journal article |
| Language |
English |
| Publication date |
2021 |
| CC license |
|
