| Title |
Development of quaternary InAlGaN barrier layer for high electron mobility transistor structures / |
| Authors |
Jorudas, Justinas ; Paweł Prystawko, Paweł ; Šimukovič, Artūr ; Aleksiejūnas, Ramūnas ; Mickevičius, Jūras ; Kryśko, Marcin ; Michałowski, Paweł Piotr ; Kašalynas, Irmantas |
| DOI |
10.3390/ma15031118 |
| Full Text |
|
| Is Part of |
Materials.. Basel : MDPI. 2022, vol. 15, iss. 3, art. no. 1118, p. [1-11].. eISSN 1996-1944 |
| Keywords [eng] |
InAlGaN ; GaN ; high electron mobility transistor structures ; III-nitride heterostructures ; microwave power devices ; THz plasmonic devices |
| Abstract [eng] |
A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In0.165Al0.775Ga0.06N/Al0.6Ga0.4N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 1013 cm−2 (1.6 × 1013 cm−2 in theory) with the low-field mobility values of 1590 cm2/(V·s) and 8830 cm2/(V·s) at the temperatures of 300 K and 77 K, respectively. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2022 |
| CC license |
|
