| Title |
Remote epitaxy of GaN via graphene on GaN/sapphire templates by MOVPE / |
| Translation of Title |
Nuotolinė GaN epitaksija per grafeną ant GaN/safyro padėklų MOVPE metodu. |
| Authors |
Badokas, Kazimieras |
| DOI |
10.15388/vu.thesis.366 |
| Full Text |
|
| Pages |
168 |
| Keywords [eng] |
GaN ; MOVPE ; epitaxy ; graphene |
| Abstract [eng] |
Remote epitaxy is a novel technique for crystal growth. It is based on remote interaction between the epitaxial layer and the substrate via the graphene interlayer. The van der Waals surface of graphene allows facile epilayer release while preserving the high quality of the epilayer and enabling the reuse of the substrate. This work aims to investigate the suitability of graphene-covered gallium nitride/sapphire template for the remote epitaxy of GaN by metalorganic vapor phase epitaxy process. Different graphene transfer techniques are examined. The influence of GaN film growth parameters on GaN quality is investigated. Finally, the exfoliation of the GaN membrane is demonstrated. This work should be valuable for further remote epitaxy technology development. |
| Dissertation Institution |
Vilniaus universitetas. |
| Type |
Doctoral thesis |
| Language |
English |
| Publication date |
2022 |
