| Abstract [eng] |
Semiconductor light technologies are widely used in various fields such as telecommunications, defense industry and medicine. Medical applications are of particular interest as this area is still at the publication level and is being heavily researched. The biological research we are interested in is based on the absorption of biomolecules. For example, lactate and glucose are biomolecules with absorption in the long-wavelength region (1.7 to 2.5 μm). To have a single device, that could determine the concentrations of many biomolecules, a broad tunable source is needed in the wide long-wavelength range. By applying semiconductor gain chip technology and integrating them into a silicon photonics chip, we can obtain a wide tuning frequency source. Gain chips are light sources that have a sufficiently wide spectrum. It is an intermediate option between a laser diode and a light emitting diode (LED). In order to obtain a wide and less modulated spectrum, the geometry of the laser diode needs to be changed: either by bending the waveguide at an angle, thus avoiding lasing, or by covering it with optical coatings. By additionally changing the length of the resonator, the width of the waveguide or the length of the edge, different output power and spectral area can be obtained. Several gain chips with different central wavelengths can be combined by integrating then into a single silicon photonics chip. In this work characterizes the performance of GaSb 2.2 μm - 2.3 μm wavelength gain chips and laser diodes. Light sources of different geometric structures and performance of gain chips placed in an external resonator were examined. Emission spectra were measured for the gain chips and laser diodes. We found out how the performance of the gain chip changes when they are integrated into a silicon photonics chip. Gain chips were used for integration, but we know that the gain chip placed in the external resonator acts like a laser diode, so the performance of the laser diode before integration was investigated. In this work examines the performance of gain chips after integration into a silicon photonics chip, and compares the generation thresholds and center wavelength shift with nonintegrated gain chips. In addition, the preparation procedure of a silicon photonics chip before integration: splitting, cutting, polishing was examined.70 Completed measurements allowed for characterization of 2.2 μm and 2.3 μm gain chips. By combining two of these gain chips, a spectral range width of about 130 nm can be obtained. These gain chips are suitable for wide tuning source applications. |
