| Title |
Nesąlytinė savitųjų ir technologinių defektų spektroskopija Si, Ge ir GaN dariniuose / |
| Translation of Title |
Contactless spectroscopy of native and technological defects in Si, Ge and GaN structures. |
| Authors |
Uleckas, Aurimas |
| Full Text |
|
| Pages |
36 |
| Keywords [eng] |
Radiation defects ; deep levels ; in situ ; MW-PC |
| Abstract [eng] |
Electrically active defects are one of the main obstacles to produce high efficiency semiconductor based devices. Deep levels determine the non-radiative recombination processes and deteriorate efficiency of light emitting diodes, charge collection efficiency of radiation detectors and determine high power dissipation of the power devices. This work is addressed to material science and development of contactless measurement technologies for non-invasive defects characterization and identification within modern structures of Si, Ge and GaN by developing the non-destructive techniques. Contactless time resolved techniques for deep levels spectroscopy has been approved for evaluation of defects parameters within irradiated Si and implanted Ge structures. Peculiarities of recombination parameters have been revealed in Ge structures dependent on doping and irradiation. The methodology and instrumentation for the control of recombination parameters during irradiations by penetrative and stopped protons have been proposed, designed and approved. Evolution of densities and of species of the radiation defects during irradiation has been examined and models for fluence dependent variations of density of extended defects are proposed. An impact of dislocation networks on recombination properties has been revealed within strained thin-layered SiGe structures and epitaxial GaN layers. The models for explanation of the interplay of defects in these structures have been proposed in this dissertation. |
| Type |
Summaries of doctoral thesis |
| Language |
Lithuanian |
| Publication date |
2012 |
