| Title |
Synthesis and study of oxide semiconductor nanoheterostructures in SiO2/Si track template / |
| Authors |
Dauletbekova, Alma ; Junisbekova, Diana ; Baimukhanov, Zein ; Kareiva, Aivaras ; Popov, Anatoli I ; Platonenko, Alexander ; Akilbekov, Abdirash ; Abdrakhmetova, Ainash ; Aralbayeva, Gulnara ; Koishybayeva, Zhanymgul ; Khamdamov, Jonibek |
| DOI |
10.3390/cryst14121087 |
| Full Text |
|
| Is Part of |
Crystals.. Basel : MDPI. 2024, vol. 14, iss. 12, art. no. 1087, p. [1-17].. eISSN 2073-4352 |
| Keywords [eng] |
I–V characteristic ; nanoheterostructure ; orthorhombic SnO2 ; oxide semiconductors ; photoluminescence ; track template SiO2/Si ; δ-Ga2O3 |
| Abstract [eng] |
In this study, chemical deposition was used to synthesize structures of Ga2O3 -NW/SiO2/Si (NW—nanowire) at 348 K and SnO2-NW/SiO2/Si at 323 K in track templates SiO2/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga2O3 and orthorhombic SnO2. Computer modeling of the delta phase of gallium oxide yielded a lattice parameter of a = 9.287 Å, which closely matched the experimental range of 9.83–10.03 Å. The bandgap is indirect with an Eg = 5.5 eV. The photoluminescence spectra of both nanostructures exhibited a complex band when excited by light with λ = 5.16 eV, dominated by luminescence from vacancy-type defects. The current–voltage characteristics of δ-Ga2O3 NW/SiO2/Si-p showed one-way conductivity. This structure could be advantageous in devices where a reverse current is undesirable. The p-n junction with a complex structure was formed. This junction consists of a polycrystalline nanowire base exhibiting n-type conductivity and a monocrystalline Si substrate with p-type conductivity. The I–V characteristics of SnO2-NW/SiO2/Si suggested near-metallic conductivity due to the presence of metallic tin. |
| Published |
Basel : MDPI |
| Type |
Journal article |
| Language |
English |
| Publication date |
2024 |
| CC license |
|
