| Title |
Hydrodynamic modelling of terahertz rectification in AlGaN/GaN high electron mobility transistors / |
| Authors |
Vyšniauskas, Juozas ; Lisauskas, Alvydas ; Bauer, Maris ; Čibiraitė, Dovilė ; Matukas, Jonas ; Roskos, Hartmut G |
| DOI |
10.1088/1742-6596/906/1/012023 |
| Full Text |
|
| Is Part of |
Journal of physics: conference series.. Bristol : IOP Publishing Ltd. 2017, Vol. 906, art. no. 012023, [4 p.].. ISSN 1742-6588 |
| Keywords [eng] |
terahertz ; hydrodynamic modelling ; AlGaN/GaN |
| Abstract [eng] |
We report on the numerical modelling of rectification in a gated two-dimensional electron gas. We demonstrate that drift-diffusion-based and energy-relaxation-based models predict different features of rectified terahertz radiation as a function of gate bias. Whereas the widely accepted mechanism for rectification is considered to be plasmonic-based, there are conditions when diffusion currents originating by non-local carrier heating can dominate the response. Moreover, diffusive contributions can substantially enhance the response becoming an important phenomenon, which has to be considered in future designs of efficient transistor-based terahertz rectifiers. |
| Published |
Bristol : IOP Publishing Ltd |
| Type |
Conference paper |
| Language |
English |
| Publication date |
2017 |
