| Title |
Kompaktiški AlGaN/GaN heterosandūriniai terahercinės spinduliuotės šaltiniai ir jutikliai / |
| Translation of Title |
Compact terahertz emitters and detectors based on AlGaN/GaN heterostructures. |
| Authors |
Jakštas, Vytautas |
| Full Text |
|
| Pages |
108 |
| Keywords [eng] |
AlGaN ; GaN ; HEMT ; Schottky diode ; plasmon |
| Abstract [eng] |
The rapidly expanding applications of THz-frequency radiation encourages the research of new materials and technological solutions that allow the creation of compact, frequency-tunable electric THz radiation sources and high-speed sensors operating at room temperature. The main goal of the dissertation is to develop high-electron mobility transistors (HEMTs) and “bow-tie” diodes from AlGaN/GaN heterostructures and to investigate their availability for the emission and detection of THz radiation. A simpler technology for the manufacturing of AlGaN/GaN samples is introduced in dissertation and the electrical parameters of such-made components (high electron mobility transistors (HEMT) and Schottky diodes) are comparable to those of commercially available AlGaN/GaN components. THz radiation of commercial THz source was successfully detected by the manufactured AlGaN/GaN transistor and “bow-tie” diode sensors. After examining the radiation spectra of a large-area HEMT with a lattice-type gate electrode, one of the observed peaks was attributed to the first mode of the ungraded plasmon. A possibility to investigate residual impurities in AlGaN/GaN heterostructures by measuring electroluminescence spectra was demonstrated. |
| Dissertation Institution |
Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras. |
| Type |
Doctoral thesis |
| Language |
Lithuanian |
| Publication date |
2018 |
